Precursor ion damage and angular dependence of single event...

IEEE Transactions on Nuclear Science 1998 / Dec. Vol. 45; Iss. 6

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

Sexton, F.W., Fleetwood, D.M., Shaneyfelt, M.R., Dodd, P.E., Hash, G.L., Schanwald, L.P., Loemker, R.A., Krisch, K.S., Green, M.L., Weir, B.E., Silverman, P.J.
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Volume:
45
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/23.736492
Date:
January, 1998
File:
PDF, 970 KB
english, 1998
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