[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
Czornomaz, L., Daix, N., Cheng, K., Caimi, D., Rossel, C., Lister, K., Sousa, M., Fompeyrine, J.Year:
2013
Language:
english
DOI:
10.1109/iedm.2013.6724548
File:
PDF, 1.26 MB
english, 2013