Systematic electrical characteristics of ideal rectangular...

IEEE Transactions on Nanotechnology 2003 / 12 Vol. 2; Iss. 4

Systematic electrical characteristics of ideal rectangular cross section si-fin channel double-gate MOSFETs fabricated by a wet process

Yongxun Liu,, Ishii, K., Tsutsumi, T., Masahara, M., Sekigawa, T., Sakamoto, K., Takashima, H., Yamauchi, H., Suzuki, E.
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Volume:
2
Language:
english
Journal:
IEEE Transactions On Nanotechnology
DOI:
10.1109/tnano.2003.820798
Date:
December, 2003
File:
PDF, 699 KB
english, 2003
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