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[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Challenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate
Patchett, David, Myronov, Maksym, Rhead, Stephen, Halpin, John, Leadley, DavidYear:
2014
DOI:
10.1109/istdm.2014.6874654
File:
PDF, 1.39 MB
2014