[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Band Edge Gate First HfSiON/Metal Gate n-MOSFETs using ALD-La2O3 Cap Layers Scalable to EOT=0.68 nm for hp 32 nm Bulk Devices with High Performance and Reliability

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