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[IEEE 2007 IEEE International Electron Devices Meeting - Washington, DC, USA (2007.12.10-2007.12.12)] 2007 IEEE International Electron Devices Meeting - Band Edge Gate First HfSiON/Metal Gate n-MOSFETs using ALD-La2O3 Cap Layers Scalable to EOT=0.68 nm for hp 32 nm Bulk Devices with High Performance and Reliability
Kamiyama, Satoshi, Miura, Takayoshi, Kurosawa, Etsuo, Kitajima, Masashi, Ootuka, Minoru, Aoyama, Takayuki, Nara, YasuoYear:
2007
Language:
english
DOI:
10.1109/iedm.2007.4418994
File:
PDF, 3.55 MB
english, 2007