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[IEEE 2012 IEEE Symposium on VLSI Technology - Honolulu, HI, USA (2012.06.12-2012.06.14)] 2012 Symposium on VLSI Technology (VLSIT) - High mobility Ge pMOSFETs with 0.7 nm ultrathin EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma post oxidation
Zhang, R., Huang, P. C., Taoka, N., Takenaka, M., Takagi, S.Year:
2012
Language:
english
DOI:
10.1109/vlsit.2012.6242511
File:
PDF, 417 KB
english, 2012