![](/img/cover-not-exists.png)
[Japan Soc. Appl. Phys 1995 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (6-8 June 1995)] 1995 Symposium on VLSI Technology. Digest of Technical Papers - Reoxidized nitric oxide (ReoxNO) process and its effect on the dielectric reliability of the LOCOS edge
Maiti, B., Tobin, P.J., Okada, Y., Ajuria, S., Reid, K.G., Hegde, R.I., Kaushik, V.Year:
1995
Language:
english
DOI:
10.1109/vlsit.1995.520859
File:
PDF, 246 KB
english, 1995