Effect of Nitrous Oxide High Pressure Annealing on the...

IEEE Electron Device Letters 2014 / 04 Vol. 35; Iss. 4

Effect of Nitrous Oxide High Pressure Annealing on the Performance of Low Temperature, Soluble-Based IZO Transistors

Kim, Hyo Jin, Son, Byeong Geun, Lee, Chul-Kyu, Je, So Yeon, Won, Ju Yeon, Jeong, Jae Kyeong
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Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2302841
Date:
April, 2014
File:
PDF, 506 KB
english, 2014
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