Counter doping into uniformly and heavily doped channel...

IEEE Electron Device Letters 1996 / 01 Vol. 17; Iss. 1

Counter doping into uniformly and heavily doped channel region of sub-0.1 μm SOI MOSFETs

Suzuki, K., Satoh, A., Sugii, T.
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Volume:
17
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.475558
Date:
January, 1996
File:
PDF, 249 KB
english, 1996
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