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[IEEE 2009 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - San Diego, CA, USA (2009.09.9-2009.09.11)] 2009 International Conference on Simulation of Semiconductor Processes and Devices - Hole Mobility and Its Enhancement with Strain for Technologically Relevant III-V Semiconductors
Nainani, Aneesh, Kim, Donghyun, Krishnamohan, Tejas, Saraswat, KrishnaYear:
2009
Language:
english
DOI:
10.1109/sispad.2009.5290251
File:
PDF, 1.85 MB
english, 2009