[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Self-consistent quasi-static C-V characteristics of In1−xGaxSb XOI FET
Alam, Md. Nur Kutubul, Islam, Muhammad Shaffatul, Islam, Md. RaifqulYear:
2013
Language:
english
DOI:
10.1109/edssc.2013.6628047
File:
PDF, 1.14 MB
english, 2013