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[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Fin-channel-array transistor (FCAT) featuring sub-70nm low power and high performance DRAM
Lee, D.-H., Lee, B.-C., Jung, I.-S., Taek Jung Kim,, Yong-Hoon Son,, Sun-Ghil Lee,, Young-Pil Kim,, Siyoung Choi,, U-In Chung,, Joo-Tae Moon,Year:
2003
Language:
english
DOI:
10.1109/iedm.2003.1269309
File:
PDF, 295 KB
english, 2003