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An Effective Approach of Reducing the Keep-Out-Zone Induced by Coaxial Through-Silicon-Via
Fengjuan Wang,, Zhangming Zhu,, Yintang Yang,, Xiangkun Yin,, Xiaoxian Liu,, Ruixue Ding,Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2014.2330838
Date:
August, 2014
File:
PDF, 1.95 MB
english, 2014