GaN MOS-HEMT Using Ultra-Thin Al 2 O 3 Dielectric Grown by Atomic Layer Deposition
Yuan-Zheng, Yue, Yue, Hao, Qian, Feng, Jin-Cheng, Zhang, Xiao-Hua, Ma, Jin-Yu, NiVolume:
24
Language:
english
Journal:
Chinese Physics Letters
DOI:
10.1088/0256-307X/24/8/072
Date:
August, 2007
File:
PDF, 288 KB
english, 2007