Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al 0.5 Ga 0.5 N quantum dots: strong effect of capping layer and atmospheric condition
Kim, Je-Hyung, Elmaghraoui, Donia, Leroux, Mathieu, Korytov, Maxim, Vennéguès, Philippe, Jaziri, Sihem, Brault, Julien, Cho, Yong-HoonVolume:
25
Language:
english
Journal:
Nanotechnology
DOI:
10.1088/0957-4484/25/30/305703
Date:
August, 2014
File:
PDF, 1.70 MB
english, 2014