In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors
Praveen, K. C., Pushpa, N., Naik, P. S., Cressler, John D., Shiva, H. B., Verma, Shammi, Tripathi, Ambuj, Gnana Prakash, A. P.Volume:
168
Language:
english
Journal:
Radiation Effects and Defects in Solids
DOI:
10.1080/10420150.2013.787073
Date:
August, 2013
File:
PDF, 357 KB
english, 2013