[IEEE 2006 IEEE International Symposium on Power...

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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Influence of Layout Geometries on the Behavior of 4H-SiC 600V Merged PiN Schottky (MPS) Rectifiers

d'Alessandro, V., Irace, A., Breglio, G., Spirito, P., Bricconi, A., Carta, R., Raffo, D., Merlin, L.
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Year:
2006
Language:
english
DOI:
10.1109/ispsd.2006.1666097
File:
PDF, 3.10 MB
english, 2006
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