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Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation
S. Hernández, R. Cuscó, L. Artús, E. Nogales, R.W. Martin, K.P. O’Donnell, G. Halambalakis, O. Briot, K. Lorenz, E. AlvesVolume:
28
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.optmat.2005.09.021
File:
PDF, 205 KB
english, 2006