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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements
Garros, X., Brunet, L., Rafik, M., Coignus, J., Reimbold, G, Vincent, E., Bravaix, A., Boulanger, F.Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703297
File:
PDF, 396 KB
english, 2010