Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron...

Materials Science Forum 2013 / 1 Vol. 740-742

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

Yoshihara, Kazuki, Kato, Masashi, Ichimura, Masaya, Hatayama, Tomoaki, Ohshima, Takeshi
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Volume:
740-742
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.740-742.373
Date:
January, 2013
File:
PDF, 355 KB
english, 2013
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