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[IEEE 2008 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2008) - Hakone-Machi, Kanagawa (2008.09.9-2008.09.11)] 2008 International Conference on Simulation of Semiconductor Processes and Devices - Comparative Simulation Study of GNR-FETs using EHT- and TB-based NEGF
Ming Zhang,, Qiushi Ran,, Ximeng Guan,, Jinyu Zhang,, Yan Wang,, Zhiping Yu,Year:
2008
Language:
english
DOI:
10.1109/SISPAD.2008.4648263
File:
PDF, 917 KB
english, 2008