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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
Dodd, P.E., Shaneyfelt, M.R., Schwank, J.R., Hash, G.L.Year:
2002
Language:
english
DOI:
10.1109/iedm.2002.1175846
File:
PDF, 315 KB
english, 2002