Depassivation of latent plasma damage in nMOSFETs

IEEE Transactions on Device and Materials Reliability 2001 / Sept. Vol. 1; Iss. 3

Depassivation of latent plasma damage in nMOSFETs

Cellere, G., Pantisano, L., Valentini, M.G., Paccagnella, A.
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Volume:
1
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/7298.974829
Date:
January, 2001
File:
PDF, 134 KB
english, 2001
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