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[IRE 1984 International Electron Devices Meeting - ()] 1984 International Electron Devices Meeting - Reduced n+/p+-spacing with high latchup hardness in self-aligned double well CMOS technology
Schwabe, U., Jacobs, E.P., Takacs, D., Winnerl, J., Lange, E.Year:
1984
Language:
english
DOI:
10.1109/iedm.1984.190737
File:
PDF, 814 KB
english, 1984