High density and low leakage current based SRAM cell using...

International Journal of Electronics 2013 / 04 Vol. 100; Iss. 4

High density and low leakage current based SRAM cell using 45 nm technology

Akashe, Shyam, Sharma, Sanjay
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Volume:
100
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207217.2012.713023
Date:
April, 2013
File:
PDF, 2.96 MB
english, 2013
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