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[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP anisotropic etching
Yonai, Yoshiharu, Kanazawa, Toru, Ikeda, Shunsuke, Miyamoto, YasuyukiYear:
2011
Language:
english
DOI:
10.1109/iedm.2011.6131545
File:
PDF, 687 KB
english, 2011