[IEEE 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Glasgow, United Kingdom (2013.09.3-2013.09.5)] 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices
Torrente, Giulio, Castellani, Niccolo, Ghetti, Andrea, Compagnoni, Christian Monzio, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, AugustoYear:
2013
Language:
english
DOI:
10.1109/sispad.2013.6650564
File:
PDF, 1.09 MB
english, 2013