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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Scaling of 32nm low power SRAM with high-K metal gate
Yang, H. S., Wong, R., Hasumi, R., Gao, Y., Kim, N.S., Lee, D. H., Badrudduza, S., Nair, D., Ostermayr, M., Kang, H., Zhuang, H., Li, J., Kang, L., Chen, X., Thean, A., Arnaud, F., Zhuang, L., SchilleYear:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796660
File:
PDF, 769 KB
english, 2008