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[IEEE 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. - Honolulu, HI, USA (June 13-15, 2006)] 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. - A Raised Source/Drain Extension pFET on Si [110] Realized by In-situ Doped Selective Epitaxy Technology
Wang, J., Kikuchi, Y., Tateshita, Y., Kato, T., Kataoka, T., Hirano, T., Nagano, K., Ikuta, T., Miyanami, Y., Fujita, S., Hiyama, S., Yamamoto, R., Kanda, S., Yamakawa, S., Kimura, T., Kugimiya, K., YYear:
2006
Language:
english
DOI:
10.1109/vlsit.2006.1705281
File:
PDF, 547 KB
english, 2006