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The Effectiveness of Ta Prepared by Ion-Assisted Deposition as a Diffusion Barrier Between Copper and Silicon
Kang, Byoung-SunVolume:
144
Year:
1997
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.1837684
File:
PDF, 1.45 MB
english, 1997