p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study...

IEEE Transactions on Electron Devices 2014 / 01 Vol. 61; Iss. 1

p-Type Nanowire Schottky Barrier MOSFETs: Comparative Study of Ge- and Si-Channel Devices

Choi, Wonchul, Lee, Jaehyun, Shin, Mincheol
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Volume:
61
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2013.2292008
Date:
January, 2014
File:
PDF, 911 KB
english, 2014
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