International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
2015 / 07 Vol. 28; Iss. 4
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Impact of high- κ gate dielectric and other physical parameters on the electrostatics and threshold voltage of long channel gate-all-around nanowire transistor
Khan, Saeed Uz Zaman, Hossain, Md. Shafayat, Rahman, Fahim Ur, Zaman, Rifat, Hossen, Md. Obaidul, Khosru, Quazi D. M.Volume:
28
Language:
english
Journal:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
DOI:
10.1002/jnm.2015
Date:
July, 2015
File:
PDF, 2.07 MB
english, 2015