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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes
N. I. Bochkareva,V. V. Voronenkov,R. I. Gorbunov,P. E. Latyshev…Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613010089
Date:
January, 2013
File:
PDF, 268 KB
english, 2013