Features of electron transport in relaxed Si/Si1 −xGextransistor heterostructures with a high doping level
M. L. Orlov,Zs. J. Horvath,N. L. Ivina,V. N. Neverov,L. K. OrlovVolume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S106378261407015X
Date:
July, 2014
File:
PDF, 577 KB
english, 2014