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Conductivity compensation inn-4H-SiC (CVD) under irradiation with 0.9-MeV electrons
V. V. Kozlovski,A. A. Lebedev,V. N. Lomasov,E. V. Bogdanova…Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614080156
Date:
August, 2014
File:
PDF, 247 KB
english, 2014