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Photoluminescence characterization of thermal defects in Czochralski grown silicon heat treated at 600°C
V.V. Emtsev, A.V. Mudryi, V.V. Emtsev Jr., D.S. Poloskin, G.A. OganesyanVolume:
340-342
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2003.09.209
File:
PDF, 201 KB
english, 2003