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The use of neutron diffraction in the quantitative characterization of dopant-dependent dynamical properties of semiconductors
D Martı́n y Marero, V Corregidor, M Fiederle, E DiéguezVolume:
350
Year:
2004
Language:
english
Pages:
1
DOI:
10.1016/j.physb.2004.03.149
File:
PDF, 214 KB
english, 2004