Improved thermoelectric properties due to electronic topological transition under high pressure
N.V. Chandra Shekar, D.A. Polvani, J.F. Meng, J.V. BaddingVolume:
358
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.physb.2004.12.020
File:
PDF, 206 KB
english, 2005