Behavior of shallow acceptor impurities in uniaxially stressed silicon and in synthetic diamond studied by
T.N. Mamedov, D. Andreika, A.S. Baturin, D. Herlach, V.N. Gorelkin, K.I. Gritsaj, V.G. Ralchenko, A.V. Stoykov, V.A. Zhukov, U. ZimmermannVolume:
374-375
Year:
2006
Language:
english
Pages:
5
DOI:
10.1016/j.physb.2005.11.110
File:
PDF, 299 KB
english, 2006