Characterization of defects created in Cz and epitaxial Si...

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Cloud Nyamhere, P.N.K. Deenapanray, F.D. Auret, F.C. Farlow
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Volume:
376-377
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2005.12.043
File:
PDF, 162 KB
english, 2006
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