Defect engineering for 650 nm high-power AlGaInP...

Defect engineering for 650 nm high-power AlGaInP laser diodes

D.S. Kim, K.C. Kim, Y.C. Shin, D.H. Kang, B.J. Kim, Y.M. Kim, Y. Park, T.G. Kim
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Volume:
376-377
Year:
2006
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2005.12.154
File:
PDF, 128 KB
english, 2006
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