Point and extended defects engineering as a key to advancing the technology of light-emitting diodes based on single-crystal Si and SiGe layers
N.A. SobolevVolume:
401-402
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.physb.2007.08.103
File:
PDF, 154 KB
english, 2007