Si-related defects in InGaP/GaAs heterojunction bipolar...

Physica B: Condensed Matter 2007 Vol. 401-402; Iss. none

Si-related defects in InGaP/GaAs heterojunction bipolar transistors

Hisashi Yamada, Noboru Fukuhara, Masahiko Hata
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Volume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.110
File:
PDF, 199 KB
english, 2007
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