Formation of low-resistivity region in p-Si substrate of...

Physica B: Condensed Matter 2007 Vol. 401-402; Iss. none

Formation of low-resistivity region in p-Si substrate of SiGe/Si episystem by remote-hydrogen plasma treatment

Yoshifumi Yamashita, Yoshifumi Sakamoto, Yoichi Kamiura, Takeshi Ishiyama
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Volume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.150
File:
PDF, 153 KB
english, 2007
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