Influence of boron on the point defect equilibrium in highly n-doped gallium arsenide single crystals
U. Kretzer, F. Börner, T. Bünger, S. EichlerVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.158
File:
PDF, 432 KB
english, 2007