Electrical properties of GaAsN film grown by chemical beam...

Electrical properties of GaAsN film grown by chemical beam epitaxy

K. Nishimura, H. Suzuki, K. Saito, Y. Ohshita, N. Kojima, M. Yamaguchi
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Volume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.183
File:
PDF, 168 KB
english, 2007
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