Electrical properties of GaAsN film grown by chemical beam epitaxy
K. Nishimura, H. Suzuki, K. Saito, Y. Ohshita, N. Kojima, M. YamaguchiVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.08.183
File:
PDF, 168 KB
english, 2007