Dose rate dependence of radiation-induced lattice defects and performance degradation in npn Si bipolar transistors by 2-MeV electron irradiation
K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, E. Simoen, A. Mercha, C. ClaeysVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.09.001
File:
PDF, 155 KB
english, 2007