Modeling fast-transient defect evolution and carrier recombination in pulse-neutron-irradiated Si devices
S.M. Myers, W.R. Wampler, P.J. Cooper, D.B. KingVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.09.002
File:
PDF, 184 KB
english, 2007