IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si
C.A. Londos, A. Andrianakis, D. Aliprantis, H. Ohyama, V.V. Emtsev, G.A. OganesyanVolume:
401-402
Year:
2007
Language:
english
Pages:
4
DOI:
10.1016/j.physb.2007.09.005
File:
PDF, 202 KB
english, 2007