Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance
A. Stesmans, V.V. Afanas’evVolume:
401-402
Year:
2007
Language:
english
Pages:
6
DOI:
10.1016/j.physb.2007.09.019
File:
PDF, 190 KB
english, 2007